STE26N50 MOSFET MOD.26A 500V N-CH SOT227B ENHANCEMENT CHASS

STE26N50 MOSFET MOD.26A 500V N-CH SOT227B ENHANCEMENT CHASS Description

STE26N50 MOSFET MOD.26A 500V N-CH SOT227B ENHANCEMENT CHASS The STE26N50, manufactured by STM, is a high-performance module MOSFET designed for mosfet mod.26a 500v n-ch sot227b enhancement chass. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 26A and a voltage rating of 500V, with a low on-resistance of 200m Ohms ensuring efficient operation. It can handle a power dissipation of up to 300W, making it ideal for demanding environments. The reverse recovery time is 850ns, allowing for fast switching. Operating within a temperature range of -55°C~+150°C, it offers robust performance across various conditions. As a n/a-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the STE26N50 is an excellent choice for professionals seeking high-quality module MOSFET solutions.

STE26N50 MOSFET MOD.26A 500V N-CH SOT227B ENHANCEMENT CHASS Technical Specifications

• Manufacturer: STM
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: Enhancement
• FetType: N-CH
• Current(25°C): 26A
• Voltage: 500V
• RdsOn: 200m Ohms
• PowerDissipation: 300W
• Trr: 850ns
• Configuration: Single
• Applications:
• OperatingTemperature: -55°C~+150°C
• Rohs:
• Packaging: TUBE

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